4v drive nch + nch mosfet SH8K12 ? structure ? dimensions (unit : mm) silicon n-channel mosfet ? features 1) low on-resistance. 2) built-in g-s protection diode. 3) small surface mount package (sop8). ? application switching ? packaging specifications ? inner circuit package taping code tb basic ordering unit (pieces) 2500 SH8K12 ? absolute maximum ratings (ta = 25 ? c) symbol limits unit drain-source voltage v dss 30 v gate-source voltage v gss ? 20 v continuous i d ? 5.0 a pulsed i dp ? 20 a continuous i s 1.6 a pulsed i sp 20 a 2.0 w / total 1.4 w / element channel temperature tch 150 ? c range of storage temperature tstg ? 55 to ? 150 ? c *1 pw ? 10 ? s, duty cycle ? 1% *2 mounted on a ceramic board. p d type source current (body diode) drain current parameter power dissipation (1) tr1 source (2) tr1 gate (3) tr2 source (4) tr2 gate (5) tr2 drain (6) tr2 drain (7) tr1 drain (8) tr1 drain ?1 esd protection diode ?2 body diode *2 *1 *1 sop8 (1) (8) (5) (4) ?2 ?1 ?2 ?1 (8) (7) (1) (2) (6) (5) (3) (4) 1/6 2011.02 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
SH8K12 ? electrical characteristics (ta = 25 ? c) symbol min. typ. max. unit gate-source leakage i gss -- ? 10 ? av gs = ? 20v, v ds =0v drain-source breakdown voltage v (br)dss 30 - - v i d =1ma, v gs =0v zero gate voltage drain current i dss --1 ? av ds =30v, v gs =0v gate threshold voltage v gs (th) 1.0 - 2.5 v v ds =10v, i d =1ma -3042 i d =5.0a, v gs =10v -4056 i d =5.0a, v gs =4.5v -4563 i d =5.0a, v gs =4.0v forward transfer admittance l y fs l 2.5 - - s i d =5.0a, v ds =10v input capacitance c iss - 250 - pf v ds =10v output capacitance c oss - 90 - pf v gs =0v reverse transfer capacitance c rss - 45 - pf f=1mhz turn-on delay time t d(on) -6-nsi d =2.5a, v dd 15v rise time t r - 27 - ns v gs =10v turn-off delay time t d(off) - 26 - ns r l =6 ? fall time t f -5-nsr g =10 ? total gate charge q g - 4.0 - nc i d =5.0a, v dd 15v gate-source charge q gs - 1.2 - nc v gs =5v gate-drain charge q gd - 1.2 - nc *pulsed ? body diode characteristics (source-drain) (ta = 25 ?c) symbol min. typ. max. unit forward voltage v sd - - 1.2 v i s =5.0a, v gs =0v *pulsed conditions conditions m ? parameter parameter static drain-source on-state resistance r ds (on) * * * * * * * * * * * * * * * * * 2/6 2011.02 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
SH8K12 ? electrical characteristic curves (ta=25 ? c) 0 1 2 3 4 5 0 0.2 0.4 0.6 0.8 1 v gs = 2.0v v gs = 10v v gs = 4.5v v gs = 4.0v v gs = 3.0v v gs = 2.5v ta=25 c pulsed fig.1 typical output characteristics( ) drain current : i d [a] drain - source voltage : v ds [v] 0 1 2 3 4 5 0 2 4 6 8 10 v gs = 2.0v v gs = 2.5v v gs = 10v v gs = 4.5v v gs = 4.0v v gs = 2.8v ta=25 c pulsed drain - source voltage : v ds [v] fig.2 typical output characteristics( ) drain current : i d [a] 0.001 0.01 0.1 1 10 0 1 2 3 v ds = 10v pulsed ta=125 c ta=75 c ta=25 c ta= - 25 c fig.3 typical transfer characteristics drain current : i d [a] gate - source voltage : v gs [v] 10 100 1000 0.1 1 10 . v gs = 4.0v v gs = 4.5v v gs = 10v ta=25 c pulsed fig.4 static drain - source on - state resistance vs. drain current( ) drain - current : i d [a] static drain - source on - state resistance : r ds ( on )[m ? ] 10 100 1000 0.1 1 10 v gs = 10v pulsed ta=125 c ta=75 c ta=25 c ta= - 25 c fig.5 static drain - source on - state resistance vs. drain current( ) drain - current : i d [a] static drain - source on - state resistance : r ds ( on )[m ? ] 10 100 1000 0.1 1 10 v gs = 4.5v pulsed ta=125 c ta=75 c ta=25 c ta= - 25 c fig.6 static drain - source on - state resistance vs. drain current( ) drain - current : i d [a] static drain - source on - state resistance : r ds ( on )[m ? ] 3/6 2011.02 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
SH8K12 10 100 1000 0.1 1 10 v gs = 4.0v pulsed ta=125 c ta=75 c ta=25 c ta= - 25 c fig.7 static drain - source on - state resistance vs. drain current( ) drain - current : i d [a] static drain - source on - state resistance : r ds ( on )[m ? ] 0.1 1 10 0.01 0.1 1 10 v ds = 10v pulsed ta=125 c ta=75 c ta=25 c ta= - 25 c fig.8 forward transfer admittance vs. drain current forward transfer admittance : |yfs| [s] drain - current : i d [a] 0.01 0.1 1 10 0 0.5 1 1.5 v gs =0v pulsed ta=125 c ta=75 c ta=25 c ta= - 25 c fig.9 reverse drain current vs. sourse - drain voltage source current : is [a] source - drain voltage : v sd [v] 0 20 40 60 80 100 0 5 10 i d = 5.0a i d = 2.5a ta=25 c pulsed fig.10 static drain - source on - state resistance vs. gate source voltage static drain - source on - state resistance : r ds ( on )[m ? ] gate - source voltage : v gs [v] 1 10 100 1000 0.01 0.1 1 10 t f t d(on) t d(off) t a =25 c v dd =15v v gs =10v r g =25 w pulsed t r fig.11 switching characteristics switching time : t [ns] drain - current : i d [a] 0 2 4 6 8 10 0 2 4 6 8 10 t a =25 c v dd = 15v i d = 5.0a pulsed fig.12 dynamic input characteristics gate - source voltage : v gs [v] total gate charge : qg [nc] 4/6 2011.02 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
SH8K12 10 100 1000 0.01 0.1 1 10 100 c iss c rss t a =25 c f=1mhz v gs =0v c oss fig.13 typical capacitance vs. drain - source voltage drain - source voltage : v ds [v] capacitance : c [pf] 0.01 0.1 1 10 100 0.1 1 10 100 p w = 10ms dc operation operation in this area is limited by r ds(on) (v gs =10v) p w =100us p w =1ms ta=25 c single pulse mounted on a ceramic board. (30mm 30mm 0.8mm) fig.14 maximum safe operating aera drain - source voltage : v ds [v] drain current : i d (a) 0.001 0.01 0.1 1 10 0.0001 0.01 1 100 mounted on a ceramic board. (30mm 30mm 0.8mm) rth (ch - a) =89.3 c /w rth (ch - a) (t)=r(t) rth (ch - a) ta=25 c single pulse fig.15 normalized transient thermal resistance vs. pulse width pulse width : pw(s) normarized transient thermal resistance : r (t) 5/6 2011.02 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
SH8K12 ? measurement circuits ? notice this product might cause chip aging and breakdown under the large electrified environment. please consider to design esd protection circuit. v gs r g v d s d.u.t. i d r l v dd 90% 90% 90 % 10% 10% 50% 10% 50% v gs pulse width v ds t on t off t r t d(on) t f t d(off) v g v gs charge q g q gs q gd v gs i g(const.) v d s d.u.t. i d r l v dd fig.1-1 switching time measurement circuit fig.1-2 switching waveforms fig.2-1 gate charge measurement circuit fig.2-2 gate charge waveform 6/6 2011.02 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
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